type bsz16dn25ns3 g opti mos tm 3 power-transistor features ? optimized for dc-dc conversion ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? low on-resistance r ds(on) ? 150 c operating temperature ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target application ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25?c 10.9 a t c =100?c 7.7 pulsed drain current 2) i d,pulse t c =25?c 44 avalanche energy, single pulse e as i d =5.5?a, r gs =25? w 120 mj reverse diode d v /d t d v /d t 10 kv/s gate source voltage v gs 20 v power dissipation p tot t c =25?c 62.5 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 value 1) j-std20 and jesd22 2) see figure 3 v ds 250 v r ds(on),max 165 m w i d 10.9 a product summary type package marking bsz16dn25ns3 g pg - tsdson - 8 16dn25n pg - tsdson - 8 rev. 2.2 page 1 2011-07-14
bsz16dn25ns3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2 k/w r thja 6 cm 2 cooling area 3) - - 60 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0?v, i d =1?ma 250 - - v gate threshold voltage v gs(th) v ds = v gs , i d =32?a 2 3 4 zero gate voltage drain current i dss v ds =200?v, v gs =0?v, t j =25?c - 0.1 1 a v ds =200?v, v gs =0?v, t j =125?c - 10 100 gate-source leakage current i gss v gs =20?v, v ds =0?v - 1 100 na drain-source on-state resistance r ds(on) v gs =10?v, i d =5.5?a - 146 165 m w gate resistance r g - 2.1 - w transconductance g fs | v ds |>2| i d | r ds(on)max , i d =5.5?a 7 14 - s values 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. thermal resistance, junction - ambient rev. 2.2 page 2 2011-07-14
bsz16dn25ns3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 690 920 pf output capacitance c oss - 44 59 reverse transfer capacitance c rss - 5.2 - turn-on delay time t d(on) - 6 - ns rise time t r - 4 - turn-off delay time t d(off) - 11 - fall time t f - 4 - gate charge characteristics 4) gate to source charge q gs - 3.0 - nc gate to drain charge q gd - 1.2 - switching charge q sw - 2.1 - gate charge total q g - 8.6 11.4 gate plateau voltage v plateau - 4.3 - v output charge q oss v dd =100?v, v gs =0?v - 16 22 nc reverse diode diode continous forward current i s - - 10.9 a diode pulse current i s,pulse - - 44 diode forward voltage v sd v gs =0?v, i f =10.9?a, t j =25?c - 0.9 1.2 v reverse recovery time t rr - 103 - ns reverse recovery charge q rr - 337 - nc 4) see figure 16 for gate charge parameter definition v r =100?v, i f = i s , d i f /d t =100?a/s t c =25?c values v gs =0?v, v ds =100?v, f =1?mhz v dd =100?v, v gs =10?v, i d =5.5?a, r g =1.6? w v dd =99?v, i d =5.5?a, v gs =0?to?10?v rev. 2.2 page 3 2011-07-14
bsz16dn25ns3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 - 1 10 0 10 1 z thjc [k/w] t p [s] 0 10 20 30 40 50 60 70 0 40 80 120 160 p tot [w] t c [ c] 0 2 4 6 8 10 12 0 40 80 120 160 i d [a] t c [ c] 1 s 10 s 100 s 1 ms 10 ms dc 10 - 1 10 0 10 1 10 2 10 3 10 - 1 10 0 10 1 10 2 i d [a] v ds [v] rev. 2.2 page 4 2011-07-14
bsz16dn25ns3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 5 v 5.5 v 6 v 8 v 10 v 0 40 80 120 160 200 240 0 4 8 12 16 r ds(on) [m w ] i d [a] 25 c 150 c 0 5 10 15 20 25 0 2 4 6 8 i d [a] v gs [v] 0 4 8 12 16 20 24 0 4 8 12 16 g fs [s] i d [a] 4.5 v 5 v 5.5 v 6 v 7 v 10 v 0 5 10 15 20 25 0 1 2 3 4 5 i d [a] v ds [v] rev. 2.2 page 5 2011-07-14
bsz16dn25ns3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =5.5 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 50 100 150 200 250 300 350 400 450 - 60 - 20 20 60 100 140 180 r ds(on) [m w ] t j [ c] 32 a 320 a 0 0.5 1 1.5 2 2.5 3 3.5 4 - 60 - 20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 0 10 1 10 2 10 3 0 40 80 120 160 200 c [pf] v ds [v] 25 c 150 c 25 c, 98% 150 c, 98% 0.1 1 10 100 0 0.5 1 1.5 2 i f [a] v sd [v] rev. 2.2 page 6 2011-07-14
bsz16dn25ns3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 w v gs =f( q gate ); i d =5.5 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 50 v 125 v 200 v 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 v gs [v] q gate [nc] 230 240 250 260 270 280 - 60 - 20 20 60 100 140 180 v br(dss) [v] t j [ c] 25 c 100 c 125 c 0.1 1 10 1 10 100 1000 i as [a] t av [s] rev. 2.2 page 7 2011-07-14 v gs q gate v gs(th) q g(th) q gs q gd q sw q g
bsz16dn25ns3 g package outline:pg-tsdson-8 rev. 2.2 page 8 2011-07-14
bsz16dn25ns3 g published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain rev. 2.2 page 9 2011-07-14
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